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FDD6530A
July 2001
FDD6530A
20V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
* 21 A, 20 V RDS(ON) = 32 m @ VGS = 4.5 V RDS(ON) = 47 m @ VGS = 2.5 V * Low gate charge (6.5 nC typical) * Fast switching
Applications
* DC/DC converter * Motor drives
* High performance trench technology for extremely low RDS(ON) .
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 8
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
21 100 33 3.3 1.6 -55 to +175
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
4.5 45 96
C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDD6530A Device FDD6530A Reel Size 13'' Tape width 16mm Quantity 2500 units
(c)2001 Fairchild Semiconductor Corporation
FDD6630A Rev C (W)
FDD6530A
Electrical Characteristics
Symbol
W DSS IAR BVDSS BVDSS TJ IDSS IGSSF IGSSR
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
Single Pulse, VDD = 10 V
Min
Typ
Max Units
55 8 mJ A V
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
VGS = 0 V, ID = 250 A 20 15 1 100 -100 ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 8 V, VGS = -8 V, VGS = 0 V VDS = 0 V VDS = 0 V mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 8 A VGS = 2.5 V, ID = 6.6 A VGS = 4.5 V, ID = 8 A, TJ = 125C VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 8 A
0.4
0.9 -3 26 36 36
1.2
V mV/C m
32 47 48
ID(on) gFS
20 21
A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 10 V, f = 1.0 MHz
V GS = 0 V,
710 173 84
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd IS VSD Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
8 7 18 4
16 14 32 8 9
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 8 A,
6.5 1.3 1.9
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.7 A
(Note 2)
2.7 0.8 1.2
A V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) RJA = 45C/W when mounted on a 1in pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
PD RDS ( ON )
2
b) RJA = 96C/W when mounted on a minimum pad.
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6530A Rev. C (W)
FDD6530A
Typical Characteristics
30
VGS = 4.5V 3.5V
24 ID , DRAIN CURRENT (A)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.0V
1.6
2.5V
18
VGS = 2.5V
1.4
3.0V
1.2
12
3.5V 4.0V 4.5V
2.0V
6
1
0 0 1 2 3 4 5 V DS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 6 12 18 24 30 ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.12
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
RDS(ON), ON-RESISTANCE (OHM)
1.6 1.4 1.2 1 0.8 0.6 -50
ID = 8 A VGS = 4.5V
ID = 4 A
0.09
o
TA = 125 C
0.06
TA = 25 C
0.03
o
-25
0
25
50
75
100
o
125
150
175
0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
15
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V VDS = 5V TA =-55 C
o
IS, REVERSE DRAIN CURRENT (A)
25oC 125oC
10
ID, DRAIN CURRENT (A)
12
TA = 125 C
1
o
9
25oC
0.1
-55oC
0.01 0.001 0.0001
6
3
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDD6530A Rev. C (W)
FDD6530A
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V)
1200
ID = 8 A
4
VDS = 5V 15V
10V
1000 CAPACITANCE (pF)
f = 1MHz VGS = 0 V CISS
3
800 600 400 200
2
COSS
1
CRSS
0 0 2 4 Qg, GATE CHARGE (nC) 6 8 0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000 P(pk), PEAK TRANSIENT POWER (W) 100s RDS(ON) LIMIT 10ms 10 100ms 1s 10s VGS = 10V SINGLE PULSE o RJA = 96 C/W TA = 25oC 0.1 1 DC 1ms 100
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
100
80
SINGLE PULSE RJA = 96C/W TA = 25C
60
1
40
0.1
20
0.01 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
0 0.01
0.1
1 t1, TIME (sec)
10
100
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05
RJA(t) = r(t) + RJA RJA = 96 C/W P(pk)
0.02 0.01
t1 t2
SINGLE PULSE
0.01
TJ - TA = P * RJA (t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDD6530A Rev. C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM
STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H3

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